US 12,142,476 B2
Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
Masayuki Asai, Toyama (JP); Tomoki Imamura, Toyama (JP); Kazuyuki Okuda, Toyama (JP); Yasuhiro Inokuchi, Toyama (JP); and Norikazu Mizuno, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on May 24, 2023, as Appl. No. 18/323,160.
Application 18/323,160 is a continuation of application No. 17/983,274, filed on Nov. 8, 2022, granted, now 11,705,325.
Application 17/983,274 is a continuation of application No. 16/875,287, filed on May 15, 2020, granted, now 11,527,401, issued on Dec. 13, 2022.
Claims priority of application No. 2019-093761 (JP), filed on May 17, 2019.
Prior Publication US 2023/0298883 A1, Sep. 21, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); C23C 16/458 (2006.01); C23C 16/50 (2006.01); C23C 16/52 (2006.01); H01L 21/673 (2006.01)
CPC H01L 21/0217 (2013.01) [C23C 16/4584 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/67303 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
forming a film on the substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including:
(a) supplying a precursor gas and an inert gas to the substrate; and
(b) supplying a reaction gas to the substrate,
wherein in (a), at least one selected from the group of the precursor gas and the inert gas stored in a first tank is supplied to the substrate, and at least one selected from the group of the precursor gas and the inert gas stored in a second tank different from the first tank is supplied to the substrate,
wherein an amount of the precursor gas in the first tank in a state where at least one selected from the group of the precursor gas and the inert gas is stored in the first tank is set to be different from an amount of the precursor gas in the second tank in a state where at least one selected from the group of the precursor gas and the inert gas is stored in the second tank, and
wherein in (a), the at least one selected from the group of the precursor gas and the inert gas is supplied from the first tank to the substrate, and the at least one selected from the group of the precursor gas and the inert gas is supplied from the second tank to the substrate so as to suppress multiple adsorption of molecules constituting the precursor gas on a surface of the substrate.