CPC H01J 37/32816 (2013.01) [C23C 16/042 (2013.01); H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01L 21/0271 (2013.01); H01L 21/32 (2013.01)] | 13 Claims |
1. A processing chamber, comprising:
a chamber body and a lid plate, the chamber body and the lid plate defining an interior volume of the processing chamber, the lid plate supporting at least one evaporator;
a substrate support disposed in the interior volume of the processing chamber;
a showerhead disposed above the substrate support;
a first heater disposed in the interior volume of the processing chamber in or on the substrate support, the first heater configured to provide temperature control during self-assembled monolayer (SAM) deposition;
a second heater disposed in the interior volume of the processing chamber and proximate the chamber body, the second heater configured to provide temperature control during SAM annealing; and
a controller configured to direct the SAM deposition, to direct the first heater to provide temperature control during the SAM deposition, and to direct the second heater to provide temperature control during the SAM annealing, wherein the second heater is not used to provide temperature control during the SAM deposition.
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