US 12,142,465 B2
Plasma processing method and plasma processing apparatus
Sho Hiraoka, Miyagi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Aug. 31, 2022, as Appl. No. 17/823,598.
Claims priority of application No. 2021-147135 (JP), filed on Sep. 9, 2021.
Prior Publication US 2023/0072102 A1, Mar. 9, 2023
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32724 (2013.01) [H01J 37/32449 (2013.01); H01J 37/32706 (2013.01); H01J 37/32981 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A plasma processing method comprising:
(a) placing a substrate on an electrostatic chuck at a first temperature, the electrostatic chuck being disposed in a plasma processing chamber;
(b) electrostatically attracting the substrate to the electrostatic chuck;
(c) starting supply of a heat transfer gas between the substrate and the electrostatic chuck;
(d) detecting a flow rate of the heat transfer gas or a pressure between the substrate and the electrostatic chuck;
(e) determining whether the flow rate or the pressure exceeds a predetermined threshold value;
(f) raising a temperature of the electrostatic chuck until the temperature of the electrostatic chuck becomes a second temperature, the second temperature being higher than the first temperature; and
(g) generating plasma in the plasma processing chamber.