CPC H01J 37/32174 (2013.01) [H01J 37/32412 (2013.01); H01J 37/32477 (2013.01); H01J 37/32559 (2013.01); H01J 37/32568 (2013.01); H01J 37/32706 (2013.01); H01J 37/32935 (2013.01); H01L 21/67109 (2013.01)] | 20 Claims |
1. A system for plasma processing, the system comprising:
a processing chamber comprising a first electrical plane proximate to an inner zone in the processing chamber and a second electrical plane proximate to an outer zone in the processing chamber;
a first bias supply to provide a first asymmetric periodic voltage waveform to the first electrical plane;
a second bias supply to provide a second asymmetric periodic voltage waveform to the second electrical plane;
a controller to adjust one or more characteristics of the asymmetric periodic voltage waveforms to alter corresponding portions of a plasma sheath.
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