US 12,142,459 B2
Single chamber flowable film formation and treatments
Khokan Chandra Paul, Cupertino, CA (US); Adam J. Fischbach, Campbell, CA (US); Tsutomu Tanaka, Santa Clara, CA (US); and Canfeng Lai, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Sep. 8, 2020, as Appl. No. 17/014,224.
Prior Publication US 2022/0076922 A1, Mar. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/32 (2006.01); C23C 16/24 (2006.01); C23C 16/509 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01)
CPC H01J 37/32174 (2013.01) [C23C 16/24 (2013.01); C23C 16/509 (2013.01); H01J 37/32697 (2013.01); H01L 21/32055 (2013.01); H01L 21/32137 (2013.01); H01L 21/32138 (2013.01); H01L 29/66545 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A processing method comprising:
forming a plasma of a silicon-containing precursor;
depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor, wherein the semiconductor substrate is housed in a processing region of a semiconductor processing chamber, wherein the semiconductor substrate defines a feature within the semiconductor substrate, and wherein the processing region is at least partially defined between a faceplate and a substrate support on which the semiconductor substrate is seated;
forming a treatment plasma within the processing region of the semiconductor processing chamber, wherein the treatment plasma is formed at a first power level from a first power source, and wherein a second power level is applied to the substrate support from a second power source; and
densifying the flowable film within the feature defined within the semiconductor substrate with plasma effluents of the treatment plasma;
wherein the second power source is operated in a pulsing mode at a pulsing frequency of less than or about 1 kHz.