CPC H01J 37/08 (2013.01) [G01N 27/06 (2013.01); H01J 37/32944 (2013.01); H01J 37/3299 (2013.01)] | 16 Claims |
1. A method for monitoring a plasma processing chamber, the method comprising:
applying, with a bias supply, a modified periodic voltage function to an electrical node, wherein each cycle of the modified periodic voltage function includes four portions: a first portion with a voltage that increases to a second portion that has a positive voltage relative to an onset of the voltage of the first portion, a third portion starting at an end of the second portion with a voltage drop, ΔV, and a fourth portion,
that includes a negative voltage ramp from an end of the third portion; and
monitoring, with the bias supply, at least the fourth portion of the modified periodic voltage function over multiple cycles;
calculating, based upon the monitoring, ion current in the plasma processing chamber; and
utilizing the calculation of ion current to monitor conditions in the plasma processing chamber.
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