US 12,142,429 B1
Systems and methods for patterning valve metals
Markondeyaraj Pulugurtha, Miami, FL (US); Arvind Agarwal, Miami, FL (US); Cheng Zhang, Miami, FL (US); Reshmi Banerjee, Miami, FL (US); and Denny John, Miami, FL (US)
Assigned to The Florida International University Board of Trustees, Miami, FL (US)
Filed by Markondeyaraj Pulugurtha, Miami, FL (US); Arvind Agarwal, Miami, FL (US); Cheng Zhang, Miami, FL (US); Reshmi Banerjee, Miami, FL (US); and Denny John, Miami, FL (US)
Filed on Mar. 26, 2024, as Appl. No. 18/616,828.
Int. Cl. H01G 13/00 (2013.01); H01G 4/008 (2006.01); H01G 4/04 (2006.01); H01G 4/224 (2006.01); H01G 4/228 (2006.01)
CPC H01G 13/003 (2013.01) [H01G 4/008 (2013.01); H01G 4/04 (2013.01); H01G 4/224 (2013.01); H01G 4/228 (2013.01); H01G 13/006 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A patterned high-capacitance-density valve metal device comprising:
a metal substrate;
a nonporous portion of cold-sprayed metal provided on the metal substrate;
a porous portion of cold-sprayed metal provided on the nonporous portion of cold-sprayed metal;
a build-up structure disposed on the metal substrate and around the porous portion of cold-sprayed metal; and
a metal lead frame,
the metal lead frame comprising:
a first vertical interconnect disposed through a first via within the build-up structure;
a second vertical interconnect disposed through a second via within the build-up structure;
a first electrode termination disposed directly on and in physical contact with the first vertical interconnect;
a second electrode termination disposed directly on and in physical contact with the second vertical interconnect, the second electrode termination being physically spaced apart from the first electrode termination;
a third electrode termination disposed on the porous portion of cold-sprayed metal and physically spaced apart from the first electrode termination and the second electrode termination; and
a fourth electrode termination disposed on the porous portion of cold-sprayed metal and physically spaced apart from the first electrode termination, the second electrode termination, and the third electrode termination,
the first vertical interconnect, the second vertical interconnect, the first electrode termination, the second electrode termination, the third electrode termination, and the fourth electrode termination all comprising metal,
wherein the build-up structure comprising a dielectric material, and
the build-up structure having an upper surface that is higher than an upper surface of the porous portion of cold-sprayed metal, such that a shortest distance between an upper surface of the metal substrate and the upper surface of the build-up structure is greater than a shortest distance between the upper surface of the metal substrate and the upper surface of the porous portion of cold-sprayed metal.