US 12,142,322 B2
Memory device and programming method thereof
Hongtao Liu, Wuhan (CN); Ying Huang, Wuhan (CN); Wenzhe Wei, Wuhan (CN); Song Min Jiang, Wuhan (CN); Dejia Huang, Wuhan (CN); and Wen Qiang Chen, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Jul. 18, 2022, as Appl. No. 17/867,174.
Application 17/867,174 is a continuation of application No. 16/889,746, filed on Jun. 1, 2020, granted, now 11,423,987.
Application 16/889,746 is a continuation of application No. PCT/CN2020/087794, filed on Apr. 29, 2020.
Prior Publication US 2022/0351779 A1, Nov. 3, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 16/16 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01); G11C 16/28 (2006.01); G11C 16/30 (2006.01)
CPC G11C 16/10 (2013.01) [G11C 16/0408 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/28 (2013.01); G11C 16/30 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
memory cells comprising:
a selected memory cell;
a first unselected memory cell; and
a second unselected memory cell; and
a control logic coupled to the memory cells, wherein the control logic is configured to:
before a programming operation, apply a ground voltage to a selected word line corresponding to the selected memory cell; and
apply a first voltage to a first unselected word line corresponding to the first unselected memory cell and a second unselected word line corresponding to the second unselected memory cell.