US 12,141,480 B2
Storage device and operating method thereof including a plurality of zones and operating method thereof
Dongik Jeon, Seoul (KR); Kyungbo Yang, Hwaseong-si (KR); Seokwon Ahn, Suwon-si (KR); and Hyeonwu Kim, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-Do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 3, 2023, as Appl. No. 18/501,412.
Application 18/501,412 is a continuation of application No. 18/148,534, filed on Dec. 30, 2022, granted, now 11,842,082.
Application 18/148,534 is a continuation of application No. 17/032,654, filed on Sep. 25, 2020, granted, now 11,544,006, issued on Jan. 3, 2023.
Claims priority of application No. 10-2020-0021033 (KR), filed on Feb. 20, 2020.
Prior Publication US 2024/0061618 A1, Feb. 22, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0659 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A solid state drive (SSD) comprising:
a non-volatile memory including a plurality of zones that include a first zone and a second zone, each of the plurality of zones including a plurality of blocks, each of the plurality of blocks including a plurality of pages, each of the plurality of pages corresponding to a data write unit and/or a data read unit; and
a controller coupled to the non-volatile memory, and including a compression/decompression circuit,
wherein the controller is configured to receive a first write command and first data from an external device,
the compression/decompression circuit is configured to compress the first data to generate compressed first data,
the controller is configured to write the compressed first data to the first zone of the non-volatile memory, and
the controller is configured to provide the external device with a response including a write pointer that represents a storage location at which the first compression data is stored and corresponds to a first logical address of the first zone.