US 12,141,446 B2
Memory device for individually applying voltages to word lines adjacent to selected word line, and operating method thereof
Dae Sik Ham, Suwon-si (KR); and Sanghun Kim, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 23, 2022, as Appl. No. 17/951,712.
Claims priority of application No. 10-2021-0159134 (KR), filed on Nov. 18, 2021; and application No. 10-2022-0056275 (KR), filed on May 6, 2022.
Prior Publication US 2023/0152982 A1, May 18, 2023
Int. Cl. G06F 12/00 (2006.01); G06F 3/06 (2006.01); G06F 13/00 (2006.01)
CPC G06F 3/0619 (2013.01) [G06F 3/0629 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising:
a memory block comprising a first adjacent word line, a selected word line, and a second adjacent word line provided in a direction perpendicular to a substrate; and
an address decoding circuit,
wherein, in a first setup period in which the selected word line is set up for a programming operation, the first setup period comprising a start time point and an end time point, the address decoding circuit is configured to:
apply a first pre-setup voltage to the first adjacent word line between the start time point of the first setup period and a first time point;
apply a first setup voltage that is higher than the first pre-setup voltage to the first adjacent word line between the first time point and the end time point of the first setup period;
apply a second pre-setup voltage to the second adjacent word line between the start time point of the first setup period and a second time point; and
apply a second setup voltage that is higher than the second pre-setup voltage to the second adjacent word line between the second time point and the end time point of the first setup period, and
wherein the first pre-setup voltage is higher than the second pre-setup voltage.