US 12,139,812 B2
Method of growing bulk single crystal diamond on a substrate in a prescribed gas environment at a prescribed temperature and pressure
John P. Ciraldo, Chicago, IL (US); and Jonathan Levine-Miles, Chicago, IL (US)
Assigned to Advanced Diamond Holdings, LLC, Beltsville, MD (US)
Filed by Advanced Diamond Holdings, LLC, Beltsville, MD (US)
Filed on Jan. 20, 2021, as Appl. No. 17/153,403.
Claims priority of provisional application 62/963,231, filed on Jan. 20, 2020.
Prior Publication US 2021/0222323 A1, Jul. 22, 2021
Int. Cl. C30B 25/20 (2006.01); C30B 25/16 (2006.01); C30B 25/22 (2006.01); C30B 29/04 (2006.01)
CPC C30B 25/20 (2013.01) [C30B 25/16 (2013.01); C30B 25/22 (2013.01); C30B 29/04 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of forming one or more diamonds, the method comprising:
providing a growth chamber having a gas environment;
positioning a single crystal diamond substrate within the growth chamber;
depositing diamond material on the single crystal diamond substrate for epitaxial growth, the single crystal diamond substrate having a given crystal orientation;
growing single crystal diamond outwardly on the single crystal diamond substrate at a prescribed temperature, prescribed pressure, and with a prescribed gas content for the gas environment to produce a bulk single crystal diamond,
the prescribed gas environment having a nitrogen concentration of 2 ppm to 5 ppm for a first growth period,
the prescribed temperature being greater than 650 degrees C. and less than 950 degrees C.,
the prescribed pressure being greater than 130 Torr and less than 175 Torr;
altering the prescribed gas environment to have the nitrogen concentration of 0.5 ppm to 1.5 ppm for a second growth period after the first growth period.