US 12,139,788 B2
Cleaning apparatus for component for semiconductor production apparatus, cleaning method for component of semiconductor production apparatus, and cleaning system for component of semiconductor production apparatus
Akira Yamaguchi, Musashino (JP); and Tadanobu Arimura, Tsukuba (JP)
Assigned to TAIYO NIPPON SANSO CORPORATION, Tokyo (JP)
Appl. No. 17/293,256
Filed by TAIYO NIPPON SANSO CORPORATION, Tokyo (JP)
PCT Filed Oct. 25, 2019, PCT No. PCT/JP2019/041870
§ 371(c)(1), (2) Date May 12, 2021,
PCT Pub. No. WO2020/100554, PCT Pub. Date May 22, 2020.
Claims priority of application No. 2018-215791 (JP), filed on Nov. 16, 2018.
Prior Publication US 2022/0002864 A1, Jan. 6, 2022
Int. Cl. C23C 16/44 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); C23C 16/34 (2006.01)
CPC C23C 16/4405 (2013.01) [H01L 21/02041 (2013.01); H01L 21/67028 (2013.01); H01L 21/67098 (2013.01); C23C 16/34 (2013.01); C23C 16/4401 (2013.01); H01L 21/67109 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A cleaning apparatus for a component of a semiconductor production apparatus on which a semiconductor is attached,
wherein the cleaning apparatus comprises:
a cleaning processing furnace which is configured to house the component of a semiconductor production apparatus, the cleaning processing furnace comprising a reaction tube that has an opening at least at one end and a first flange configured to close the opening;
a heating device which is configured to heat the component of a semiconductor production apparatus in the cleaning processing furnace;
a decompression device which is configured to evacuate the inside of the cleaning processing furnace;
a gas introduction pipe which is configured to introduce a cleaning gas capable of reacting with the semiconductor into the cleaning processing furnace;
a gas discharge pipe which is configured to discharge a reaction product of the semiconductor and the cleaning gas from the cleaning processing furnace;
a first temperature control device which is configured to maintain a temperature of an inner surface of the cleaning processing furnace within a required temperature range, the first temperature control device comprising a plurality of cooling mechanisms that are configured to independently control a temperature of a plurality of portions at the inner surface of the cleaning processing furnace in the reaction tube and the first flange; and
a second temperature control device which is configured to maintain a temperature inside of the gas discharge pipe within a required temperature range.