US 12,139,214 B2
Temperature measurement of a power semiconductor switching element
Balázs Vargha, Budapest (HU)
Assigned to thyssenkrupp Presta AG, Eschen (LI); and thyssenkrupp AG, Essen (DE)
Appl. No. 17/276,202
Filed by thyssenkrupp Presta AG, Eschen (LI); and thyssenkrupp AG, Essen (DE)
PCT Filed Sep. 19, 2019, PCT No. PCT/EP2019/075116
§ 371(c)(1), (2) Date Mar. 15, 2021,
PCT Pub. No. WO2020/064485, PCT Pub. Date Apr. 2, 2020.
Claims priority of application No. 10 2018 123 903.3 (DE), filed on Sep. 27, 2018.
Prior Publication US 2022/0032996 A1, Feb. 3, 2022
Int. Cl. G01K 7/16 (2006.01); B62D 5/04 (2006.01); H03F 3/45 (2006.01)
CPC B62D 5/0496 (2013.01) [G01K 7/16 (2013.01); H03F 3/45475 (2013.01); G01K 2205/00 (2013.01); G01K 2217/00 (2013.01)] 7 Claims
OG exemplary drawing
 
1. An electromechanical steering system of a motor vehicle having a multiphase permanently excited electric motor that is controllable via an electronic control unit, wherein the electronic control unit includes semiconductor power switches that are part of an inverter and/or disposed as a semiconductor relay in each phase, wherein each of the semiconductor power switches includes,
a device for determining a temperature of the respective semiconductor power switch with a built-in temperature-dependent gate resistor;
wherein the device includes a non-inverting amplifier circuit including an operational amplifier and a feedback resistor,
wherein an inverting input of the operational amplifier is connected to the respective semiconductor power switch such that a gain of the non-inverting amplifier circuit in a predefined frequency range of an input signal depends on the built-in temperature-dependent gate resistor and the feedback resistor and is a measure of the temperature of the respective semiconductor power switch.