US 12,138,742 B2
Methods and apparatus for processing a substrate
Prayudi Lianto, Singapore (SG); Guan Huei See, Singapore (SG); Arvind Sundarrajan, Singapore (SG); Andrivo Rusydi, Singapore (SG); and Muhammad Avicenna Naradipa, Singapore (SG)
Assigned to Applied Materials, Inc.; and NATIONAL UNIVERSITY OF SINGAPORE, Singapore (SG)
Filed by Applied Materials, Inc., Santa Clara, CA (US); and NATIONAL UNIVERSITY OF SINGAPORE, Singapore (SG)
Filed on Feb. 16, 2021, as Appl. No. 17/176,839.
Prior Publication US 2022/0258304 A1, Aug. 18, 2022
Int. Cl. B24B 57/02 (2006.01); G01N 21/21 (2006.01)
CPC B24B 57/02 (2013.01) [G01N 21/211 (2013.01); G01N 2021/213 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of processing a substrate using extended spectroscopic ellipsometry (ESE), comprising:
directing a beam from an extended spectroscopic ellipsometer toward a surface of a first layer of a substrate for determining in-situ ESE data therefrom during substrate processing;
measuring a change of phase and amplitude in determined in-situ ESE data; and
prior to depositing a second layer atop the first layer, determining a level of contamination of the surface of the substrate using simultaneously complex dielectric function, optical conductivity, and electronic correlations from a measured change of phase and amplitude in the in-situ ESE data to provide an active endpoint feedback to ensure that there is minimum to no contact resistance between the second layer and the first layer.