US 12,138,736 B2
Polishing pad sheet, polishing pad, and method for manufacturing semiconductor device
Sung Hoon Yun, Seoul (KR); Kyung Hwan Kim, Seoul (KR); Jae In Ahn, Gyeonggi-do (KR); and Jang Won Seo, Seoul (KR)
Assigned to SK ENPULSE CO., LTD., Gyeonggi-do (KR)
Filed by SK enpulse Co., Ltd., Gyeonggi-do (KR)
Filed on Dec. 7, 2021, as Appl. No. 17/544,639.
Claims priority of application No. 10-2020-0169130 (KR), filed on Dec. 7, 2020.
Prior Publication US 2022/0176514 A1, Jun. 9, 2022
Int. Cl. B24B 37/22 (2012.01); B24B 37/24 (2012.01); B24D 3/28 (2006.01); C09G 1/16 (2006.01); H01L 21/306 (2006.01)
CPC B24B 37/22 (2013.01) [B24B 37/24 (2013.01); B24D 3/28 (2013.01); H01L 21/30625 (2013.01); C09G 1/16 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A polishing pad sheet comprising:
a first surface which is a polishing layer attachment surface; and
a second surface which is a rear surface of the first surface,
wherein the first surface has a value of the following Equation 1 of 4.20 to 5.50:

OG Complex Work Unit Math
where, Sv is a maximum pit height roughness value of the first surface, Sz is a maximum height roughness value of the first surface, and P is a compressibility (%) value calculated from the equation of (D1−D2)/D1×100 by collecting a specimen measuring 25 mm in width and length each from the polishing pad sheet, measuring a dial gauge in no-load condition, and then pressing with a standard weight of 85 g to measure the first thickness (D1) when 30 seconds have elapsed, and by setting up a pressure condition in which 800 g of a weight is added to the standard weight and measuring the second thickness (D2) when 3 minutes have elapsed.