US 12,471,508 B1
Phase-change electrically-controlled photonic neuron device and preparation method and application thereof
Rui Yang, Hubei (CN); Yunxiao Dong, Hubei (CN); and Xiangshui Miao, Hubei (CN)
Assigned to HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Hubei (CN)
Filed by HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Hubei (CN)
Filed on May 25, 2025, as Appl. No. 19/218,356.
Application 19/218,356 is a continuation of application No. PCT/CN2024/114228, filed on Aug. 23, 2024.
Claims priority of application No. 202411118385.1 (CN), filed on Aug. 15, 2024.
Int. Cl. H10N 70/20 (2023.01); G06N 3/065 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [G06N 3/065 (2023.01); H10N 70/021 (2023.02); H10N 70/841 (2023.02); H10N 70/8613 (2023.02); H10N 70/8828 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A novel phase-change electrically-controlled photonic neuron device, comprising a substrate, a waveguide layer located on the substrate, a phase-change material layer located on the waveguide layer, and a heating layer for heating the phase-change material layer,
wherein a chemical formula of the phase-change material layer is SbxTey, where x+y=1 and 0.6<y<1, the phase-change material layer has two phases with different physical properties, a Sb2Te3 phase and a Te phase respectively, and the Sb2Te3 phase is embedded in the Te phase to form an island structure,
when a temperature of the heating layer rises to higher than a Te phase state transition threshold, the Te phase changes from a crystalline state to an amorphous state or a molten state, and the Sb2Te3 phase maintains a crystalline state, and when the temperature of the heating layer drops to lower than the Te phase state transition threshold, the Te phase uses the Sb2Te3 phase in crystalline state as a nucleation site and transforms from an amorphous state or a molten state to a crystalline state.