US 12,471,504 B1
Trench-based quantum dot devices with conductive liners
Hubert C. George, Portland, OR (US); Ravi Pillarisetty, Portland, OR (US); Lester Lampert, Portland, OR (US); James S. Clarke, Portland, OR (US); Nicole K. Thomas, Portland, OR (US); and Jeanette M. Roberts, North Plains, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Sep. 27, 2022, as Appl. No. 17/935,617.
Int. Cl. H10N 60/10 (2023.01); G06N 10/40 (2022.01); H10N 60/01 (2023.01)
CPC H10N 60/128 (2023.02) [G06N 10/40 (2022.01); H10N 60/01 (2023.02); H10N 60/11 (2023.02)] 23 Claims
OG exemplary drawing
 
1. A quantum dot device, comprising:
a quantum well layer;
a first insulator material over the quantum well layer, wherein the first insulator material includes an opening;
a gate metal having a first portion vertically stacked over the first insulator material and having a second portion extending into the opening;
a conductive material proximate to the opening, wherein the conductive material is vertically stacked between the quantum well layer and the first portion of the gate metal; and
a second insulator material between the conductive material and the opening.