US 12,471,501 B2
Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory
Tomoyuki Sasaki, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Filed by TDK CORPORATION, Tokyo (JP)
Filed on Feb. 9, 2022, as Appl. No. 17/667,948.
Application 17/667,948 is a continuation of application No. 15/778,159, granted, now 11,374,166, previously published as PCT/JP2016/084974, filed on Nov. 25, 2016.
Claims priority of application No. 2015-232334 (JP), filed on Nov. 27, 2015; application No. 2016-053072 (JP), filed on Mar. 16, 2016; application No. 2016-056058 (JP), filed on Mar. 18, 2016; application No. 2016-210531 (JP), filed on Oct. 27, 2016; and application No. 2016-210533 (JP), filed on Oct. 27, 2016.
Prior Publication US 2022/0223786 A1, Jul. 14, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 52/80 (2023.01); G01R 33/09 (2006.01); G11B 5/39 (2006.01); G11C 11/16 (2006.01); G11C 11/18 (2006.01); H01F 10/32 (2006.01); H03B 15/00 (2006.01); H10B 61/00 (2023.01); H10D 48/40 (2025.01); H10D 84/80 (2025.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01)
CPC H10N 52/00 (2023.02) [G01R 33/098 (2013.01); G11B 5/39 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); G11C 11/1697 (2013.01); G11C 11/18 (2013.01); H01F 10/32 (2013.01); H01F 10/3254 (2013.01); H01F 10/329 (2013.01); H03B 15/00 (2013.01); H03B 15/006 (2013.01); H10B 61/00 (2023.02); H10D 48/40 (2025.01); H10D 84/80 (2025.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02); H01F 10/3286 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A spin current magnetization rotational element comprising:
a first ferromagnetic metal layer configured for a direction of magnetization to be changed; and
a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer,
wherein the lamination direction of the first ferromagnetic metal layer is set as a direction z, a direction which is perpendicular to the direction z and is parallel to an extending direction of the spin-orbit torque wiring is set as a direction x, and a direction orthogonal to the direction x and the direction z is set as a direction y,
wherein in the spin-orbit torque wiring, there is a portion of the spin-orbit torque wiring not overlapping with the first ferromagnetic metal layer in the direction y, in a plan view viewed from the direction z, such that in the plan view, the spin-orbit torque wiring is disposed to not cover a part of the first ferromagnetic metal layer in the direction y,
wherein the first ferromagnetic metal layer is connected to a first power supply which controls a current I1 which flows in the lamination direction of the first ferromagnetic metal layer, which is the direction y, and the current I1 has a spin transfer torque effect, and
wherein the spin-orbit torque wiring is connected to a second power supply which controls a current I2 which flows in the extending direction of the spin-orbit torque wiring, which is the direction x, and the current I2 has a spin orbit torque effect.