US 12,471,499 B2
Magnetic device and magnetic storage device
Rina Nomoto, Tokyo (JP); Hiroyuki Kanaya, Yokohama Kanagawa (JP); Yusuke Muto, Yokkaichi Mie (JP); and Takeshi Iwasaki, Kuwana Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Aug. 25, 2023, as Appl. No. 18/456,397.
Claims priority of application No. 2022-134896 (JP), filed on Aug. 26, 2022.
Prior Publication US 2024/0074324 A1, Feb. 29, 2024
Int. Cl. H10N 50/00 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/10 (2023.02) [G11C 11/161 (2013.01); H10B 61/00 (2023.02); H10N 50/85 (2023.02); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01)] 20 Claims
OG exemplary drawing
 
1. Magnetic device, comprising:
a layered body including a first magnetic layer, a second magnetic layer, and a first non-magnetic layer between the first magnetic layer and the second magnetic layer; and
a side wall layer that covers a side wall of the first non-magnetic layer, wherein
the side wall layer comprises at least one first substance selected from a group consisting of silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and
the side wall layer further comprises at least one second substance selected from a group consisting of arsenic, tellurium, antimony, bismuth, and germanium.