US 12,471,497 B2
Magnetic tunnel junction device with magnetoelectric assist
Karthik Yogendra, Hillsboro, OR (US); Heng Wu, Guilderland, NY (US); Saba Zare, White Plains, NY (US); and Dimitri Houssameddine, Sunnyvale, CA (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Jan. 25, 2022, as Appl. No. 17/648,816.
Prior Publication US 2023/0240148 A1, Jul. 27, 2023
Int. Cl. H10N 50/01 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/01 (2023.02) [G11C 11/161 (2013.01); H10B 61/00 (2023.02); H10N 50/80 (2023.02); G11C 11/1675 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a magnetic tunnel junction (MTJ) stack;
a first metal line above the MTJ stack, wherein the first metal line is connected physically and electrically to a top electrode of the MTJ stack; and
a magnetoelectric material layer above the first metal line.