US 12,471,487 B2
Light-emitting device, method of manufacturing the same, and operating method of the same
Kyuyoung Hwang, Anyang-si (KR); Muhyun Baik, Daejeon (KR); Seungyeon Kwak, Suwon-si (KR); Won-joon Son, Suwon-si (KR); Hyeonho Choi, Seoul (KR); Seoungtae Kim, Daejeon (KR); Seungyeol Baek, Daejeon (KR); Jinhoon Jeong, Daejeon (KR); Sunghan Kim, Daejeon (KR); and Byoungki Choi, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR); and KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, Daejeon (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and Korea Advanced Institute of Science and Technology, Daejeon (KR)
Filed on Mar. 3, 2022, as Appl. No. 17/686,293.
Claims priority of application No. 10-2021-0029052 (KR), filed on Mar. 4, 2021.
Prior Publication US 2022/0293880 A1, Sep. 15, 2022
Int. Cl. H10K 71/10 (2023.01); H10K 50/11 (2023.01); H10K 50/15 (2023.01); H10K 50/80 (2023.01); H10K 71/00 (2023.01); H10K 85/30 (2023.01)
CPC H10K 71/191 (2023.02) [H10K 50/11 (2023.02); H10K 50/156 (2023.02); H10K 85/322 (2023.02); H10K 50/80 (2023.02); H10K 71/00 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A light-emitting device comprising:
a first conductive layer; and
a light-emitting group represented by Formula 1, wherein
the light-emitting group is chemically bonded to an atom on a surface of the first conductive layer:
*-A3-(A1)m1-(A2)m2  Formula 1
wherein, in Formula 1,
* indicates a chemical binding site to an atom on the surface of the first conductive layer,
A3 is an atom bonded to the atom on the surface of the first conductive layer,
A1 is a linking group,
A2 is a light-emitting moiety, and
m1 and m2 are each independently an integer from 1 to 10, wherein, when m1 is 2 or more, two or more of A1 are identical to or different from each other, and when m2 is 2 or more, two or more of A2 are identical to each other or different from each other,
wherein a monolayer comprising a plurality of light-emitting groups is located on the surface of the first conductive layer,
wherein the monolayer comprising the plurality of light-emitting groups is in direct contact with the surface of the first conductive layer, and
wherein a thickness of the monolayer is from about 0.1 nm to about 5.0 nm.