US 12,471,432 B2
Voltage-controllable monolithic native RGB arrays
Andrea Pinos, Plymouth (GB); Wei Sin Tan, Plymouth (GB); and Samir Mezouari, Plymouth (GB)
Assigned to Plessey Semiconductors Ltd, Plymouth (GB)
Appl. No. 18/038,091
Filed by Plessey Semiconductors Ltd, Plymouth (GB)
PCT Filed Nov. 24, 2021, PCT No. PCT/GB2021/053035
§ 371(c)(1), (2) Date May 22, 2023,
PCT Pub. No. WO2022/112750, PCT Pub. Date Jun. 2, 2022.
Claims priority of application No. 2018794 (GB), filed on Nov. 30, 2020.
Prior Publication US 2024/0006460 A1, Jan. 4, 2024
Int. Cl. H10H 29/14 (2025.01)
CPC H10H 29/142 (2025.01) 25 Claims
OG exemplary drawing
 
1. A light emitting diode device comprising:
a p-type region;
an n-type region;
a gate contact;
a first light emitting region for recombination of carriers injectable by the p-type region and the n-type region; and
a second light emitting region for recombination of carriers injectable by the p-type region and the n-type region, wherein the first light emitting region and the second light emitting region at least partially overlap to form a light emitting surface associated with the first light emitting region and the second light emitting region,
wherein the p-type region is at least partially formed in a first channel through the first light emitting region and the second light emitting region, and the n-type region is at least partially formed in a second channel through the first light emitting region and the second light emitting region, wherein the light emitting diode device is configured such that the wavelength of light emitted by the light emitting surface is controllable by varying a gate voltage applied to one of the p-type and n-type regions by the gate contact thereby to alter carrier injection by the p-type and n-type regions into the first and second light emitting regions.