US 12,471,431 B2
Hard mask layer below via structure in display device
Chia-Hua Lin, New Taipei (TW); Hsun-Chung Kuang, Hsinchu (TW); Yu-Hsing Chang, Taipei (TW); and Yao-Wen Chang, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Jul. 26, 2022, as Appl. No. 17/873,338.
Application 17/873,338 is a division of application No. 16/871,257, filed on May 11, 2020, granted, now 11,682,692.
Claims priority of provisional application 62/980,506, filed on Feb. 24, 2020.
Prior Publication US 2022/0359609 A1, Nov. 10, 2022
Int. Cl. H10H 20/01 (2025.01); H10H 20/832 (2025.01); H10H 20/856 (2025.01); H10H 29/14 (2025.01); H10K 59/123 (2023.01); H10K 59/80 (2023.01); H10H 20/857 (2025.01)
CPC H10H 29/142 (2025.01) [H10H 20/835 (2025.01); H10H 20/856 (2025.01); H10K 59/123 (2023.02); H10K 59/80518 (2023.02); H10H 20/0364 (2025.01); H10H 20/857 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a display device, the method comprising:
forming an isolation structure over a reflector electrode;
forming a hard mask layer over the isolation structure;
forming a first opening extending through the hard mask layer and the isolation structure to expose a first surface of the reflector electrode, wherein inner sidewalls of the hard mask layer and the isolation structure define sidewalls of the first opening;
performing a cleaning process to clean the first surface of the reflector electrode;
forming a conductive layer over the hard mask layer, the sidewalls of the first opening, and the first surface of the reflector electrode;
performing a first removal process to remove peripheral portions of the conductive layer to form a via structure that extends through the isolation structure and directly contacts the first surface of the reflector electrode; and
performing a second removal process after the first removal process to remove peripheral portions of the hard mask layer to expose the isolation structure, wherein the hard mask layer separates the via structure from a top surface of the isolation structure after the second removal process.