US 12,471,428 B2
Variable composition ternary compound semiconductor alloys, structures, and devices
Michael R. Krames, Palo Alto, CA (US)
Assigned to Opnovix Corp., Palo Alto, CA (US)
Filed by OPNOVIX CORP., Palo Alto, CA (US)
Filed on Aug. 22, 2024, as Appl. No. 18/812,553.
Application 18/812,553 is a continuation of application No. 18/401,290, filed on Dec. 29, 2023, granted, now 12,107,113.
Claims priority of provisional application 63/436,309, filed on Dec. 30, 2022.
Prior Publication US 2024/0413191 A1, Dec. 12, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10H 29/10 (2025.01)
CPC H10H 29/10 (2025.01) 21 Claims
OG exemplary drawing
 
1. A semiconductor device comprising a multi-wavelength optoelectronic element, wherein the multi-wavelength optoelectronic element comprises:
(a) a substrate comprising a first substrate region and a second substrate region;
(b) a first Inx1Aly1Ga1-x1-y1N growth layer comprising a first (0001) Inx1Aly1Ga1-x1-y1N growth region overlying the first substrate region; and
a first optoelectronic element overlying the first (0001) Inx1Aly1Ga1-x1-y1N growth region; and
(c) a second patterned Inx2sAly2sGa1-x2s-y2sN seed region comprising a plurality of seed regions overlying the second substrate region, wherein each of the seed regions of the second patterned Inx2sAly2sGa1-x2s-y2sN seed region is six sided with a hexagonal base and triangular facets that are each coplanar with one of the {1-101} equivalent planes;
a second Inx2Aly2Ga1-x2-y2N growth layer comprising a second (0001) Inx2Aly2Ga1-x2-y2N growth region overlying the second patterned Inx2sAly2sGa1-x2s-y2sN seed region; and
a second optoelectronic element overlying the second (0001) Inx2Aly2Ga1-x2-y2N growth region,
wherein
the first (0001) Inx1Aly1Ga1-x1-y1N growth region is characterized by a first in-plane a-lattice parameter;
the second (0001) Inx2Aly2Ga1-x2-y2N growth region is characterized by a second in-plane a-lattice parameter;
the second in-plane a-lattice parameter is greater than the first in-plane a-lattice parameter;

OG Complex Work Unit Math