US 12,471,412 B2
Semiconductor light emitting device and method of fabricating the same
Hsin-Chih Chiu, Hsinchu (TW); Chih-Chiang Lu, Hsinchu (TW); Chun-Yu Lin, Hsinchu (TW); Ching-Huai Ni, Hsinchu (TW); Yi-Ming Chen, Hsinchu (TW); Tzu-Chieh Hsu, Hsinchu (TW); and Ching-Pei Lin, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Oct. 17, 2023, as Appl. No. 18/488,637.
Application 16/871,303 is a division of application No. 16/405,240, filed on May 7, 2019, granted, now 10,651,335, issued on May 12, 2020.
Application 18/488,637 is a continuation of application No. 17/570,206, filed on Jan. 6, 2022, granted, now 11,791,436.
Application 17/570,206 is a continuation of application No. 16/871,303, filed on May 11, 2020, granted, now 11,251,328, issued on Feb. 15, 2022.
Application 16/405,240 is a continuation of application No. 15/643,807, filed on Jul. 7, 2017, granted, now 10,283,669, issued on May 7, 2019.
Application 15/643,807 is a continuation of application No. 14/442,319, granted, now 9,735,312, issued on Jul. 14, 2016, previously published as PCT/CN2013/078766, filed on Jul. 3, 2013.
Prior Publication US 2024/0047604 A1, Feb. 8, 2024
Int. Cl. H10H 20/811 (2025.01); H01L 21/00 (2006.01); H01L 25/075 (2006.01); H10H 20/01 (2025.01); H10H 20/82 (2025.01); H10H 20/824 (2025.01); H10H 20/831 (2025.01); H10H 20/841 (2025.01); H10H 20/857 (2025.01)
CPC H10H 20/811 (2025.01) [H01L 21/00 (2013.01); H01L 25/0753 (2013.01); H10H 20/013 (2025.01); H10H 20/018 (2025.01); H10H 20/82 (2025.01); H10H 20/824 (2025.01); H10H 20/8316 (2025.01); H10H 20/841 (2025.01); H10H 20/857 (2025.01); H01L 2924/0002 (2013.01); H10H 20/01 (2025.01); H10H 20/8312 (2025.01)] 11 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor light-emitting device, comprising the steps of:
providing a first substrate;
forming a semiconductor epitaxial stack on the first substrate;
dividing the semiconductor epitaxial stack to multiple epitaxial units;
forming an adhesive layer on some of the multiple epitaxial units; providing a second substrate; and
transferring the some of the multiple epitaxial units to the second substrate;
wherein the adhesive layer comprises ITO, IZO, InO, SnO, FTO, ATO, CTO, AZO, GZO or the combination thereof.