US 12,471,410 B2
Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nitride devices
Abdullah Ibrahim Alhassan, Riyadh (SA); Ahmed Alyamani, Riyadh (SA); Abdulrahman Albadri, Riyadh (SA); James S. Speck, Santa Barbara, CA (US); and Steven P. DenBaars, Goleta, CA (US)
Assigned to THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US); and KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY (KACST), Riyadh (SA)
Filed by The Regents of the University of California, Oakland, CA (US); and King Abdulaziz City For Science And Technology (KACST), Riyadh (SA)
Filed on Oct. 7, 2021, as Appl. No. 17/496,124.
Application 17/496,124 is a continuation of application No. 16/270,177, filed on Feb. 7, 2019, granted, now 11,158,760.
Claims priority of provisional application 62/627,316, filed on Feb. 7, 2018.
Claims priority of provisional application 62/627,312, filed on Feb. 7, 2018.
Prior Publication US 2022/0029049 A1, Jan. 27, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H10H 20/812 (2025.01); C23C 16/34 (2006.01); H10H 20/01 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/0137 (2025.01) [C23C 16/34 (2013.01); H10H 20/812 (2025.01); H10H 20/8252 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a mesa including:
a III-nitride p-n junction, the p-n junction including an active region between a first p-type layer and a first n-type layer; and
a III-nitride region patterned on the III-nitride p-n junction, the III-nitride region including a second n-type layer, a second p-type layer, and a tunnel junction formed at an interface between the second n-type layer and the second p-type layer;
an array of openings in the III-nitride region on a top of the mesa and through the second n-type layer so as to expose the second p-type layer underlying the second n-type layer; and
a first metal contact to the first n-type layer and a second metal contact to the second n-type layer, wherein the device comprises a light emitting device outputting light in response to a current density flowing between the first metal contact and the second metal contact.