US 12,471,408 B2
Semiconductor structure and method of manufacturing the same
Feng-Chien Hsieh, Pingtung County (TW); Yun-Wei Cheng, Taipei (TW); Kuo-Cheng Lee, Tainan (TW); Cheng-Ming Wu, Tainan (TW); and Ping Kuan Chang, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jan. 10, 2023, as Appl. No. 18/152,172.
Claims priority of provisional application 63/378,074, filed on Oct. 2, 2022.
Prior Publication US 2024/0113237 A1, Apr. 4, 2024
Int. Cl. H10F 77/00 (2025.01); H01L 25/18 (2023.01); H10F 71/00 (2025.01); H10F 77/90 (2025.01)
CPC H10F 77/935 (2025.01) [H01L 25/18 (2013.01); H10F 71/00 (2025.01); H10F 77/90 (2025.01); H10F 77/955 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a sensing device;
a solar cell disposed above the sensing device and electrically connected to the sensing device;
an interconnecting structure disposed between the sensing device and the solar cell and having a first surface facing the solar cell and a second surface facing the sensing device,
wherein the interconnecting structure comprises a first energy storage component and a second energy storage component, and
wherein the first energy storage component is disposed closer to the first surface of the interconnecting structure than the second energy storage component.