US 12,471,407 B2
Light-conversion layer and photovoltaic system
Nasser Hefiana, Lausanne (CH)
Assigned to Swiss Solar Space SA, Lausanne (CH)
Appl. No. 18/283,431
Filed by Swiss Solar Space SA, Lausanne (CH)
PCT Filed Mar. 22, 2022, PCT No. PCT/IB2022/052611
§ 371(c)(1), (2) Date Sep. 21, 2023,
PCT Pub. No. WO2022/201027, PCT Pub. Date Sep. 29, 2022.
Claims priority of application No. 00306/21 (CH), filed on Mar. 22, 2021.
Prior Publication US 2024/0170598 A1, May 23, 2024
Int. Cl. H10F 77/45 (2025.01); H10F 30/221 (2025.01); H10F 77/124 (2025.01); H10F 77/14 (2025.01)
CPC H10F 77/45 (2025.01) [H10F 30/2215 (2025.01); H10F 77/12485 (2025.01); H10F 77/1437 (2025.01)] 11 Claims
OG exemplary drawing
 
1. A light-conversion layer, comprising:
a buffer layer;
a plurality of sub-layers in a material stack disposed on the buffer layer, the plurality of sub-layers comprising at least a first sub-layer of a first material alternating with a second sub-layer of a second material to form multiple pairs of first and second sub-layers in the material stack, each pair of sub-layers comprising one first sub-layer adjacent to and in contact with one second sub-layer, said first material being different from said second material,
wherein the interface between the first sub-layer and the second sub-layer of the pairs of sub-layers includes quantum nano-structures that are quantum wells,
wherein the quantum nano-structures convert a broad frequency band of incident light outside a range that is less than all frequencies of the incident light into light within the range, and
wherein the first material comprises GaInN (InGaN), the second material comprises GaN or InGaN, the buffer layer comprises InGaN having a different indium content than the first sub-layer, wherein the material stack has a thickness less than a thickness of a single-junction solar cell and comprises no less than 10 and no greater than 50 pairs of sub-layers, and wherein the light-conversion layer is no less than 70% transparent to visible light.