US 12,471,405 B2
Composition of matter
Mazid Munshi, Trondheim (NO); Helge Weman, Ecublens (CH); and Bjorn-Ove M. Fimland, Trondheim (NO)
Assigned to Squidled SAS, Paris (FR)
Appl. No. 17/761,368
Filed by CRAYONANO AS, Trondheim (NO)
PCT Filed Sep. 23, 2020, PCT No. PCT/EP2020/076631
§ 371(c)(1), (2) Date Mar. 17, 2022,
PCT Pub. No. WO2021/058605, PCT Pub. Date Apr. 1, 2021.
Claims priority of application No. 1913701 (GB), filed on Sep. 23, 2019; and application No. PCT/EP2020/070228 (WO), filed on Jul. 16, 2020.
Prior Publication US 2022/0352398 A1, Nov. 3, 2022
Int. Cl. H10H 20/812 (2025.01); H10F 71/00 (2025.01); H10F 77/124 (2025.01); H10F 77/14 (2025.01); H10F 77/164 (2025.01); H10H 20/01 (2025.01); H10H 20/825 (2025.01)
CPC H10F 77/1437 (2025.01) [H10F 71/1276 (2025.01); H10F 77/12485 (2025.01); H10F 77/146 (2025.01); H10F 77/164 (2025.01); H10H 20/01335 (2025.01); H10H 20/812 (2025.01); H10H 20/8252 (2025.01)] 15 Claims
OG exemplary drawing
 
1. A light-emitting diode or photodetector device comprising:
a plurality of group III-V nanowires or nanopyramids epitaxially grown on a polycrystalline or single-crystalline graphene layer,
said polycrystalline or single-crystalline graphene layer being directly supported on a crystalline substrate such as a group III-V semiconductor, sapphire, SiC, Si, Ga2O3, or diamond substrate,
wherein the epitaxy, crystal orientation, and facet orientations of said nanowires or nanopyramids are directed by the crystalline substrate;
said nanowires or nanopyramids having a p-n or p-i-n junction;
a first electrode in electrical contact with said polycrystalline or single-crystalline graphene layer;
a second electrode in contact with the top of at least a portion of said nanowires or nanopyramids, optionally in the form of a light-reflective layer;
wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor.