US 12,471,404 B2
Photoelectric device based on quantum dots and its manufacturing method
Seong Jun Kang, Seoul (KR); and Jun Hyung Jeong, Suwon-Si (KR)
Assigned to University-Industry Cooperation Group of Kyung Hee University, Yongin-Si (KR)
Filed by University-Industry Cooperation Group of Kyung Hee University, Yongin-Si (KR)
Filed on Jan. 25, 2024, as Appl. No. 18/422,955.
Claims priority of application No. 10-2023-0009314 (KR), filed on Jan. 25, 2023.
Prior Publication US 2024/0250193 A1, Jul. 25, 2024
Int. Cl. H10F 77/14 (2025.01); H10F 30/21 (2025.01); H10F 71/00 (2025.01)
CPC H10F 77/1433 (2025.01) [H10F 30/288 (2025.01); H10F 71/00 (2025.01)] 6 Claims
OG exemplary drawing
 
1. A method for manufacturing a photoelectric device based on quantum dots, comprising:
preparing zinc oxide solution and zirconium oxide solution;
coating the zinc oxide solution on a substrate to form a zinc oxide layer;
coating quantum dots on the zinc oxide layer to form a quantum dots (QDs) layer;
forming a zirconium oxide layer on the QDs layer; and
forming an electrode on the substrate,
wherein the photoelectric device is used as a color selective image sensor,
wherein the zirconium oxide layer is formed through one coating process and two heat treatment processes,
wherein the one coating process is performed at a speed of 3000 rpm for 30 seconds, and the two heat treatment processes include primary heat treatment at 120° C. for 1 minute followed by secondary heat treatment at 300° C. for 1 minute.