US 12,471,402 B2
Imaging apparatus, manufacturing method thereof, and electronic equipment
Nao Yoshimoto, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/756,388
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Dec. 2, 2020, PCT No. PCT/JP2020/044865
§ 371(c)(1), (2) Date May 24, 2022,
PCT Pub. No. WO2021/112128, PCT Pub. Date Jun. 10, 2021.
Claims priority of application No. 2019-219032 (JP), filed on Dec. 3, 2019.
Prior Publication US 2022/0399391 A1, Dec. 15, 2022
Int. Cl. H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/812 (2025.01) [H10F 39/014 (2025.01); H10F 39/024 (2025.01); H10F 39/18 (2025.01); H10F 39/803 (2025.01); H10F 39/80373 (2025.01); H10F 39/806 (2025.01); H10F 39/011 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An imaging apparatus, comprising:
a semiconductor substrate;
a photoelectric conversion unit in the semiconductor substrate, wherein the photoelectric conversion unit is configured to generate charge corresponding to an amount of received light by photoelectric conversion;
a charge holding unit on a side closer to a first surface of the semiconductor substrate than to the photoelectric conversion unit, wherein the charge holding unit is configured to hold the charge transferred from the photoelectric conversion unit;
a charge transfer unit configured to transfer the charge from the photoelectric conversion unit to the charge holding unit;
a vertical electrode in a depth direction of the semiconductor substrate, wherein the vertical electrode is configured to transmit the charge generated by the photoelectric conversion unit to the charge transfer unit; and
a first light control member at a position that overlaps with the vertical electrode in a case where the semiconductor substrate is seen in a plan view from a normal direction of the first surface, wherein
the first light control member is in a pixel region without straddling a boundary between pixels, and
the first light control member includes
a first light control portion on a side closer to a second surface of the semiconductor substrate than to the vertical electrode,
the first light control portion is along the second surface of the semiconductor substrate,
the second surface of the semiconductor substrate is opposite to the first surface of the semiconductor substrate, and
a second light control portion, connected to the first light control portion, extends in the depth direction of the semiconductor substrate.