US 12,471,399 B2
Light receiving device, method for manufacturing light receiving device, and distance measuring module
Ryota Watanabe, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/760,425
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Feb. 5, 2021, PCT No. PCT/JP2021/004354
§ 371(c)(1), (2) Date Aug. 9, 2022,
PCT Pub. No. WO2021/166689, PCT Pub. Date Aug. 26, 2021.
Claims priority of application No. 2020-025411 (JP), filed on Feb. 18, 2020.
Prior Publication US 2023/0071795 A1, Mar. 9, 2023
Int. Cl. H10F 39/00 (2025.01)
CPC H10F 39/8063 (2025.01) [H10F 39/011 (2025.01); H10F 39/80373 (2025.01); H10F 39/8067 (2025.01); H10F 39/807 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A light receiving device, comprising:
a substrate configured to generate, by photoelectric conversion of light, first charges and second charges;
a pixel array unit that includes a plurality of pixels in a matrix, wherein
each pixel of the plurality of pixels includes:
a first tap configured to detect the first charges; and
a second tap configured to detect the second charges,
each of the first tap and the second tap includes a voltage application unit configured to apply a voltage to the substrate, and
the voltage application unit is one of a p-type semiconductor region or an n-type semiconductor region;
a plurality of on-chip lenses on a light incident surface side of the substrate,
wherein each on-chip lens of the plurality of on-chip lenses is for a corresponding pixel of the plurality of pixels; and
a lens isolation portion in a same layer as the plurality of on-chip lenses,
wherein the lens isolation portion isolates a first on-chip lens of the plurality of on-chip lenses from a second on-chip lens of the plurality of on-chip lenses.