US 12,471,396 B2
Image sensor device
Dirk Vietzke, Vaterstetten (DE); Tobias Mono, Dresden (DE); Stefano Parascandola, Dresden (DE); Dirk Offenberg, Dresden (DE); and Alfred Sigl, Sinzing (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Oct. 7, 2022, as Appl. No. 17/938,840.
Claims priority of application No. 21201954 (EP), filed on Oct. 11, 2021.
Prior Publication US 2023/0115183 A1, Apr. 13, 2023
Int. Cl. H10F 39/00 (2025.01)
CPC H10F 39/8057 (2025.01) [H10F 39/024 (2025.01)] 21 Claims
OG exemplary drawing
 
1. An image sensor device, comprising:
a pixel, the pixel comprising:
a semiconductor layer having a first surface and a doped region;
a photodiode formed in the semiconductor layer and being configured to generate charge carriers based on light reaching the photodiode;
a storage node formed in the semiconductor layer, the storage node being arranged so that the charge carriers generated in the photodiode are transferred to the storage node, and the storage node being at least partially embedded in the doped region; and
a light-shielding structure, the light-shielding structure being formed in the semiconductor layer and being disposed at least between the first surface of the semiconductor layer and the storage node so as to prevent at least part of the light traveling in the semiconductor layer away from the first surface from reaching the storage node,
wherein the light-shielding structure is at least partially embedded in the doped region such that, in a vertical dimension of the semiconductor layer, a first portion of the doped region is arranged between the storage node and the light-shielding structure, and such that, in the vertical dimension of the semiconductor layer, a second portion of the doped region is arranged between the light-shielding structure and the first surface of the semiconductor layer, and
wherein the light-shielding structure is a hollow horizontal trench that is buried vertically between two regions of the semiconductor layer.