| CPC H10F 30/2955 (2025.01) [H10F 71/121 (2025.01); H10F 77/1223 (2025.01); H10F 77/206 (2025.01)] | 4 Claims |
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1. A semiconductor detector comprising:
an n-type semiconductor substrate;
a detection electrode formed on a first surface of the n-type semiconductor substrate and configured to collect charges generated by incidence of radiation;
a plurality of drift electrodes formed surrounding the detection electrode and applied with a voltage causing a potential gradient in which a potential changes toward the detection electrode so that the charges move toward the detection electrode; and
a radiation incidence window provided on a second surface of the n-type semiconductor substrate;
a P-type semiconductor region formed by adding boron to a surface side of the second surface through the radiation incidence window; and
a depleting electrode causing a reverse bias between the P-type semiconductor region formed on the second surface and an N-type semiconductor region formed in the n-type semiconductor substrate,
wherein fluorine is additionally added to the P-type semiconductor region, and
wherein a region with the highest concentration of fluorine is positioned more closely to the surface side of the second surface than a region with the highest concentration of boron.
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