| CPC H10F 19/70 (2025.01) [H10F 19/906 (2025.01); H10F 71/128 (2025.01); H10F 71/137 (2025.01); H10F 77/935 (2025.01)] | 20 Claims |

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1. A method for manufacturing a perovskite material bypass diode, wherein the method comprises: providing a layer of a perovskite material layer, processing the perovskite material layer to form a P-type perovskite material region and an N-type perovskite material region, so that a perovskite material bypass diode is formed.
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