US 12,471,386 B2
Electrostatic discharge protection devices
Sagar Premnath Karalkar, Essex Junction, VT (US); Ephrem Gebreselasie, South Burlington, VT (US); Rajendran Krishnasamy, Essex Junction, VT (US); Robert J. Gauthier, Jr., Williston, VT (US); and Souvick Mitra, Essex Junction, VT (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Dec. 22, 2022, as Appl. No. 18/086,938.
Prior Publication US 2024/0213240 A1, Jun. 27, 2024
Int. Cl. H10D 89/60 (2025.01); H01L 21/762 (2006.01); H01L 23/60 (2006.01); H10D 84/03 (2025.01)
CPC H10D 89/713 (2025.01) [H01L 21/76224 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure for an electrostatic discharge protection device, the structure comprising:
a semiconductor substrate;
an input/output terminal;
a first well in the semiconductor substrate, the first well having a first conductivity type;
a second well in the semiconductor substrate, the second well having the first conductivity type;
a third well in the semiconductor substrate, the third well having a second conductivity type, and the third well including a portion that overlaps with the first well;
a fourth well in the semiconductor substrate, the fourth well having the second conductivity type, and the fourth well including a portion that overlaps with the second well; and
a first doped region in the third well, the first doped region having the second conductivity type at a higher dopant concentration than the third well, and the first doped region connected to the input/output terminal.