| CPC H10D 89/711 (2025.01) | 20 Claims |
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1. A structure for an electrostatic discharge protection device, the structure comprising:
a semiconductor substrate having a top surface;
a first trench isolation region positioned in the semiconductor substrate, the first trench isolation region extending to a first depth in the semiconductor substrate;
a second trench isolation region positioned in the semiconductor substrate, the second trench isolation region extending to a second depth in the semiconductor substrate, and the second depth is greater than the first depth;
a bipolar junction transistor structure including a collector in the semiconductor substrate, an emitter in the semiconductor substrate, and a base in the semiconductor substrate, the collector and the emitter having a first conductivity type, the base having a second conductivity type opposite to the first conductivity type, and the collector including a portion that extends to the top surface of the semiconductor substrate; and
a doped region positioned in the collector adjacent to the second trench isolation region, the doped region having the second conductivity type,
wherein the first trench isolation region is positioned in the base, the second trench isolation region is positioned in a lateral direction between the portion of the collector and the base, and the second trench isolation region surrounds the base, the emitter, and the first trench isolation region.
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