US 12,471,383 B2
Transient voltage suppression device
Chih-Wei Chen, Zhubei (TW); Kuan-Yu Lin, New Taipei (TW); Mei-Lian Fan, Hukou Township (TW); and Kun-Hsien Lin, Hsinchu (TW)
Assigned to AMAZING MICROELECTRONIC CORP., New Taipei (TW)
Filed by AMAZING MICROELECTRONIC CORP., New Taipei (TW)
Filed on Jan. 18, 2023, as Appl. No. 18/098,517.
Prior Publication US 2024/0243119 A1, Jul. 18, 2024
Int. Cl. H10D 8/00 (2025.01); H10D 89/60 (2025.01)
CPC H10D 89/60 (2025.01) [H10D 8/00 (2025.01)] 4 Claims
OG exemplary drawing
 
1. A transient voltage suppression device comprising:
at least one N-type lightly-doped structure;
a first P-type well and a second P-type well formed in the at least one N-type lightly-doped structure; and
a first N-type heavily-doped area and a second N-type heavily-doped area respectively formed in the first P-type well and the second P-type well, wherein a doping concentration of the first P-type well is higher than that of the second P-type well.