| CPC H10D 86/60 (2025.01) [G02F 1/136209 (2013.01); G02F 1/136295 (2021.01); G02F 1/13685 (2021.01); H10D 86/423 (2025.01); H10D 86/441 (2025.01); H10D 86/471 (2025.01)] | 20 Claims |

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1. An array substrate, comprising:
a base substrate; and
a thin film transistor group arranged on a side of the base substrate, wherein the thin film transistor group comprises at least two thin film transistors, and the thin film transistors are stacked in a direction perpendicular to the base substrate,
wherein the thin film transistor group comprises a first thin film transistor and a second thin film transistor, the first thin film transistor comprises a first active layer and a first source and drain layer, and the second thin film transistor comprises a second active layer and a second source and drain layer; and
wherein the first source and drain layer comprises a first pole and a second pole, the first active layer comprises a first subsection and a second subsection, the first subsection and the second subsection have a first included angle, the first subsection is connected to the first pole, and the second subsection is connected to the second pole.
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