US 12,471,363 B2
Gate-to-gate isolation for stacked transistor architecture via non-selective dielectric deposition structure
Nicole K. Thomas, Portland, OR (US); and Marko Radosavljevic, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Aug. 9, 2021, as Appl. No. 17/444,678.
Prior Publication US 2023/0037957 A1, Feb. 9, 2023
Int. Cl. H10D 84/85 (2025.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 84/856 (2025.01) [H01L 21/0259 (2013.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0188 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit structure, comprising:
a first semiconductor body;
a second semiconductor body above the first semiconductor body, wherein the longest distance between an upper surface of the first semiconductor body and a lower surface of the second semiconductor body is 50 nm or less, and wherein the first and second semiconductor bodies are part of a same fin structure;
a first gate structure on the first semiconductor body;
a second gate structure on the second semiconductor body; and
an isolation structure between the first and second gate structures and comprising dielectric material, wherein the isolation structure is on a top surface of the first gate structure, the isolation structure including a central portion that extends laterally between first and second end portions, the first and second end portions extending away from the central portion toward the second gate structure, such that at least a portion of the second gate structure is on the central portion of the isolation structure and between the first and second end portions of the isolation structure, and at least a portion of the second gate structure is directly on a top surface of the first and second end portions.