US 12,471,359 B2
Semiconductor device
Kenichi Matsushita, Nonoichi Ishikawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Kawasaki (JP); and Toshiba Electronic Devices & Storage Corporation, Kawasaki (JP)
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Sep. 2, 2022, as Appl. No. 17/901,890.
Claims priority of application No. 2022-047228 (JP), filed on Mar. 23, 2022.
Prior Publication US 2023/0307443 A1, Sep. 28, 2023
Int. Cl. H10D 84/60 (2025.01); H10D 12/00 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01)
CPC H10D 84/617 (2025.01) [H10D 12/481 (2025.01); H10D 62/107 (2025.01); H10D 62/393 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first electrode;
a first semiconductor region located above the first electrode, the first semiconductor region being of a first conductivity type;
a second semiconductor region located on the first semiconductor region, the second semiconductor region being of a second conductivity type;
a third semiconductor region located on the second semiconductor region, the third semiconductor region being of the first conductivity type;
a second electrode located on the second and third semiconductor regions and electrically connected with the second and third semiconductor regions;
a conductive part including:
a first conductive region positioned opposite the first to third semiconductor regions via an insulating film, and
a second conductive region located around the second electrode, electrically connected to the first conductive region;
a fourth semiconductor region located around the second semiconductor region and electrically connected with the second semiconductor region, the fourth semiconductor region being of the second conductivity type, the fourth semiconductor region including an end portion in a direction perpendicular to a first direction, the first direction perpendicular to a surface of a semiconductor substrate including the first to fourth semiconductor regions, the end portion contacting the first semiconductor region, at least a portion of the end portion being positioned closer to the first electrode side than the second conductive region in the first direction; and
a fifth semiconductor region located between the second semiconductor region and the fourth semiconductor region, the fifth semiconductor region being of the second conductivity type, the fifth semiconductor region is shallower than the second semiconductor region, the fourth semiconductor region being electrically connected with the second semiconductor region via the fifth semiconductor region.