US 12,471,355 B2
Non-overlapping gate conductors for GAA transistors
Ruqiang Bao, Niskayuna, NY (US); Eric Miller, Albany, NY (US); and Dechao Guo, Niskayuna, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Nov. 28, 2022, as Appl. No. 18/070,050.
Prior Publication US 2024/0178072 A1, May 30, 2024
Int. Cl. H10D 84/03 (2025.01); H01L 21/28 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/85 (2025.01)
CPC H10D 84/038 (2025.01) [H01L 21/28088 (2013.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6739 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/0177 (2025.01); H10D 84/85 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first transistor on a substrate having:
a first work function metal layer; and
a first gate conductor over the first work function metal layer and having a vertical sidewall; and
a second transistor on the substrate having:
a second work function metal layer that overlaps a portion of the first work function metal layer of the first transistor and that has a vertical part above the portion of the first work function metal layer relative to the substrate and in direct contact with the vertical sidewall of the first gate conductor;
a second channel; and
a second gate conductor over the second work function metal layer, in contact with a sidewall of the vertical part of the second work function metal layer, between the vertical part of the second work function metal layer and the second channel.