| CPC H10D 64/01 (2025.01) [H01L 21/762 (2013.01); H10D 30/6735 (2025.01); H10D 62/118 (2025.01); H10D 64/017 (2025.01)] | 20 Claims |
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1. A method, comprising:
forming a first semiconductor fin and a second semiconductor fin protruding from a substrate, wherein each of the first and the second semiconductor fins includes a stack of alternating channel layers and non-channel layers;
forming a dielectric helmet between and protruding from the first and the second semiconductor fins;
forming a dummy gate stack over the dielectric helmet;
patterning the dummy gate stack to expose a portion of the dielectric helmet;
removing the exposed portion of the dielectric helmet;
forming a metal gate structure in place of the dummy gate stack and the non-channel layers, such that a remaining portion of the dielectric helmet separates the metal gate structure between the first and the second semiconductor fins; and
forming a contact feature over a portion of the metal gate structure, wherein a sidewall of the contact feature is between one of the first or the second semiconductor fin and the remaining portion of the dielectric helmet.
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