| CPC H10D 62/8503 (2025.01) [H01L 21/26546 (2013.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/824 (2025.01)] | 11 Claims |
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1. A manufacturing method of forming a semiconductor device, the manufacturing method comprising:
providing a native substrate, the native substrate having a lattice mismatch with GaN less than 3.6%;
sequentially forming a first nucleation layer, a thick GaN substrate layer, a second nucleation layer, an AlGaN barrier layer, a GaN channel layer and a leakage current stop layer on the native substrate, the first nucleation layer, the thick GaN substrate layer, the second nucleation layer, the GaN channel layer and the leakage current stop layer being un-doped;
forming an aperture area through the leakage current stop layer;
forming a GaN buffer layer on the leakage current stop layer and the aperture area;
implanting Mg ions to the GaN buffer layer to form a current blocking layer on the leakage current stop layer;
forming a GaN drift layer on the current blocking layer and the GaN buffer layer;
forming a metallic interlayer on the GaN drift layer and transferring the GaN drift layer on a transferred substrate through the metallic interlayer;
removing a semiconductor stack, the semiconductor stack comprising the second nucleation layer, the thick GaN substrate layer, the first nucleation layer and the native substrate;
forming a source contact through the AlGaN barrier layer, the source contact contacting the GaN channel layer;
forming a gate contact on the AlGaN barrier layer;
forming a drain contact on the transferred substrate.
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