US 12,471,339 B2
SiC semiconductor device
Masaya Ueno, Kyoto (JP); Yuki Nakano, Kyoto (JP); Sawa Haruyama, Kyoto (JP); Yasuhiro Kawakami, Kyoto (JP); Seiya Nakazawa, Kyoto (JP); and Yasunori Kutsuma, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on May 3, 2024, as Appl. No. 18/654,028.
Application 18/654,028 is a continuation of application No. 18/180,599, filed on Mar. 8, 2023, granted, now 12,021,120.
Application 18/180,599 is a continuation of application No. 17/265,454, granted, now 11,626,490, issued on Apr. 11, 2023, previously published as PCT/JP2019/031474, filed on Aug. 8, 2019.
Claims priority of application No. 2018-151450 (JP), filed on Aug. 10, 2018; application No. 2018-151451 (JP), filed on Aug. 10, 2018; and application No. 2018-151452 (JP), filed on Aug. 10, 2018.
Prior Publication US 2024/0282825 A1, Aug. 22, 2024
Int. Cl. H10D 62/832 (2025.01); H10D 62/40 (2025.01)
CPC H10D 62/8325 (2025.01) [H10D 62/405 (2025.01)] 21 Claims
OG exemplary drawing
 
1. An SiC semiconductor device comprising:
an SiC semiconductor layer including an SiC monocrystal and having a first main surface as a device surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface; and
a plurality of modified lines formed one layer each as a band shape at the respective side surfaces of the SiC semiconductor layer and each including a portion extending inclinedly with respect to the first main surface and modified to be of a property differing from the SiC monocrystal.