US 12,471,338 B2
Trench type silicon carbide MOSFET structure and preparation method thereof
Xin Huang, Guangzhou (CN); and Hongbo Gao, Guangzhou (CN)
Assigned to Guangzhou Anhi Semiconductor Co., Ltd., Guangzhou (CN)
Filed by Guangzhou ANHI Semiconductor Co., Ltd., Guangzhou (CN)
Filed on Apr. 12, 2023, as Appl. No. 18/299,372.
Claims priority of application No. 202211350363.9 (CN), filed on Oct. 31, 2022.
Prior Publication US 2024/0145548 A1, May 2, 2024
Int. Cl. H10D 62/832 (2025.01); H10D 12/01 (2025.01); H10D 30/01 (2025.01); H10D 30/66 (2025.01)
CPC H10D 62/8325 (2025.01) [H10D 12/031 (2025.01); H10D 30/0297 (2025.01); H10D 30/668 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A trench type silicon carbide MOSFET structure, comprising a trench gate region, wherein the trench gate region comprises:
at least one first PN junction formed by doping; and
at least one second PN junction formed by doping, wherein the second PN junction is juxtaposed and oppositely disposed with respect to the first PN junction.