US 12,471,336 B2
Semiconductor component having a SiC semiconductor body
Andreas Peter Meiser, Sauerlach (DE); Caspar Leendertz, Munich (DE); and Anton Mauder, Kolbermoor (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jan. 10, 2023, as Appl. No. 18/095,260.
Application 17/223,645 is a division of application No. 16/590,714, filed on Oct. 2, 2019, granted, now 11,011,606, issued on May 18, 2021.
Application 18/095,260 is a continuation of application No. 17/223,645, filed on Apr. 6, 2021, granted, now 11,600,701.
Claims priority of application No. 102018124740.0 (DE), filed on Oct. 8, 2018.
Prior Publication US 2023/0148156 A1, May 11, 2023
Int. Cl. H10D 62/83 (2025.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/04 (2006.01); H01L 21/308 (2006.01); H01L 21/31 (2006.01); H01L 21/311 (2006.01); H01L 21/426 (2006.01); H10D 12/00 (2025.01); H10D 12/01 (2025.01); H10D 30/01 (2025.01); H10D 30/66 (2025.01); H10D 30/83 (2025.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01); H10D 64/00 (2025.01); H10D 64/27 (2025.01)
CPC H10D 62/8325 (2025.01) [H01L 21/02019 (2013.01); H01L 21/0334 (2013.01); H01L 21/0415 (2013.01); H01L 21/046 (2013.01); H01L 21/3083 (2013.01); H01L 21/31 (2013.01); H01L 21/311 (2013.01); H01L 21/426 (2013.01); H10D 12/038 (2025.01); H10D 12/481 (2025.01); H10D 30/0297 (2025.01); H10D 30/051 (2025.01); H10D 30/668 (2025.01); H10D 30/831 (2025.01); H10D 62/105 (2025.01); H10D 62/107 (2025.01); H10D 64/117 (2025.01); H10D 64/513 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor component, comprising:
a SiC semiconductor body;
a trench extending from a first surface of the SiC semiconductor body into the SiC semiconductor body, the trench having a conductive connection structure, a structure width at a bottom of the trench, and a dielectric layer covering sidewalls of the trench;
a shielding region formed in the SiC semiconductor body along the bottom, the shielding region having a central section which has a lateral first width; and
a contact formed between the conductive connection structure and the shielding region,
wherein the conductive connection structure is electrically connected to a source electrode,
wherein in at least one doping plane extending approximately parallel to the bottom, a dopant concentration in the central section deviates by not more than 10% from a maximum value of the dopant concentration in the shielding region in the doping plane,
wherein the first width is less than the structure width and is at least 30% of the structure width.