US 12,471,334 B2
Integrated circuit devices with angled transistors formed based on angled wafers
Abhishek A. Sharma, Hillsboro, OR (US); Tahir Ghani, Portland, OR (US); Anand S. Murthy, Portland, OR (US); Wilfred Gomes, Portland, OR (US); and Sagar Suthram, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Feb. 22, 2022, as Appl. No. 17/677,239.
Prior Publication US 2023/0268382 A1, Aug. 24, 2023
Int. Cl. H10D 62/40 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10B 10/00 (2023.01); H10B 12/00 (2023.01); H10D 30/67 (2025.01)
CPC H10D 62/405 (2025.01) [H10D 30/014 (2025.01); H10D 62/121 (2025.01); H10B 10/12 (2023.02); H10B 12/05 (2023.02); H10B 12/30 (2023.02); H10D 30/6735 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) device, comprising:
a substrate; and
a transistor, comprising a channel region over the substrate,
wherein an angle between a first crystal direction of a semiconductor material in the substrate and a second crystal direction of a semiconductor material in the channel region is between 4 degrees and 60 degrees, and the first crystal direction and the second crystal direction have same Miller indices.