US 12,471,331 B2
Field effect transistor and preparation method thereof, and semiconductor structure
Wen Yin, Shenzhen (CN)
Assigned to Huawei Technologies Co., Ltd., Shenzhen (CN)
Filed by HUAWEI TECHNOLOGIES CO., LTD., Guangdong (CN)
Filed on Dec. 21, 2022, as Appl. No. 18/069,800.
Application 18/069,800 is a continuation of application No. PCT/CN2021/102239, filed on Jun. 25, 2021.
Claims priority of application No. 202010599782.0 (CN), filed on Jun. 28, 2020; and application No. 202010888184.5 (CN), filed on Aug. 28, 2020.
Prior Publication US 2023/0132748 A1, May 4, 2023
Int. Cl. H01L 29/06 (2006.01); H10D 62/10 (2025.01)
CPC H10D 62/121 (2025.01) [H10D 62/102 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A field effect transistor, comprising: a substrate structure, a source, a drain, and a gate, wherein:
the source and the drain are arranged on the substrate structure in a first direction, and a channel region is formed between the source and the drain;
a channel layer is formed in the channel region, N carbon nanotubes extending in the first direction are embedded in the channel layer, wherein N is an integer greater than or equal to 1, and two ends of each of the N carbon nanotubes are respectively connected to the source and the drain to form a conductive path, and wherein a first contact layer is disposed on a side that is of the source and that faces the channel layer, and a second contact layer is disposed on a side that is of the drain and that faces the channel layer; and
the gate is formed on the channel layer.