US 12,471,328 B2
Semiconductor device, electric power conversion device, and method for manufacturing semiconductor device
Kohei Ebihara, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Aug. 7, 2023, as Appl. No. 18/366,320.
Claims priority of application No. 2023-019329 (JP), filed on Feb. 10, 2023.
Prior Publication US 2024/0274655 A1, Aug. 15, 2024
Int. Cl. H10D 62/10 (2025.01); H01L 21/311 (2006.01); H01L 23/31 (2006.01); H10D 30/66 (2025.01); H10D 64/01 (2025.01); H10D 84/00 (2025.01); H02M 7/5387 (2007.01); H10D 62/832 (2025.01)
CPC H10D 62/106 (2025.01) [H01L 21/31144 (2013.01); H01L 23/3171 (2013.01); H01L 23/3178 (2013.01); H01L 23/3192 (2013.01); H10D 30/665 (2025.01); H10D 30/668 (2025.01); H10D 62/117 (2025.01); H10D 64/01 (2025.01); H10D 84/146 (2025.01); H01L 21/31111 (2013.01); H02M 7/53871 (2013.01); H10D 62/8325 (2025.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate having a drift layer of a first conductivity type;
an active region in which a main current flows in a thickness direction of the semiconductor substrate;
a terminal region of a second conductivity type formed in a surface layer of the drift layer and surrounding the active region;
a covering material covering the terminal region; and
a peripheral well region of a first conductivity type formed in the surface layer of the drift layer on an outer side of the terminal region and having an impurity concentration higher than that of the drift layer,
wherein a peripheral end of the covering material is arranged on an inner side of a peripheral end of the semiconductor substrate, and
the peripheral well region is at least partially formed under the covering material and not formed under a peripheral end of the covering material.